Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories.
Microelectron. J., January, 2024
Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition.
Sci. China Inf. Sci., 2024
Accurate Charge-Domain Bootstrapped Computing-in-Memory SRAM Design with Wide Programmable Output Voltage Range.
Proceedings of the 37th IEEE International System-on-Chip Conference, 2024
GRS: A General RISC-V SIMD Vector Acceleration Processor for Artificial Intelligence Applications.
Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2024
SSPE: A Device-edge SNN Inference Artificial Intelligence Processor in Supporting Smart Computing.
Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2024
Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit.
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Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
High mobility germanium-on-insulator p-channel FinFETs.
Sci. China Inf. Sci., 2021