Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO₂ and S₃N₄ as Trapping Layer.

Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer.

SONOS-Type Flash Memory with HfO₂ Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition.