2012
A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts.
[DOI]
Xingui Zhang
,
Hua Xin Guo
,
Xiao Gong
,
Yee-Chia Yeo
Proceedings of the 2012 European Solid-State Device Research Conference, 2012