2012
Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO<sub>2</sub> and S<sub>3</sub>N<sub>4</sub> as Trapping Layer.
[DOI]
Sang-Youl Lee
,
Seung-Dong Yang
,
Jae-Sub Oh
,
Ho-Jin Yun
,
Kwang-Seok Jeong
,
Yu-Mi Kim
,
Hi-Deok Lee
,
Ga-Won Lee
IEICE Trans. Electron., 2012