Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices.

CMOS low power split-drain MAGFET based magnetic field strength sensor.

High-Speed Discrete Gaussian Sampler With Heterodyne Chaotic Laser Inputs.

A double snapback SCR ESD protection scheme for 28 nm CMOS process.

Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress.

A Bias-Bounded Digital True Random Number Generator Architecture.

The variation of the leakage current characteristics of W/Ta₂O₅/W MIM capacitors with the thickness of the bottom W electrode.

Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices.

Simulation and evaluation of the peak temperature in LED light bulb heatsink.

Effects of thermal annealing on the charge localization characteristics of HfO₂/Au/HfO₂ stack.

Editorial.

A high-efficiency full-wave CMOS rectifying charge pump for RF energy harvesting applications.

Optimization of loss tangent and capacitor size of micro-vacuum dielectric capacitors.

A dynamic-biasing 4× charge pump based on exponential topology.

Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology.

Thermal stability of sectorial split-drain magnetic field-effect transistors.

On the current conduction mechanisms of CeO₂/La₂O₃ stacked gate dielectric.

Temperature dependences of threshold voltage and drain-induced barrier lowering in 60 nm gate length MOS transistors.

Special section reliability and variability of devices for circuits and systems.

Thermal and voltage instabilities of hafnium oxide films prepared by sputtering technique.

Editorial.

Improving the electrical characteristics of MOS transistors with CeO₂/La₂O₃ stacked gate dielectric.

A comparative study of charge pumping circuits for flash memory applications.

Advances in non-volatile memory technology.

Modeling of terminal ring structures for high-voltage power MOSFETs.

Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors.

Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing.

ICMAT 2011 - Reliability and variability of semiconductor devices and ICs.

Off-state drain breakdown mechanisms of VDMOS with anti-JFET implantation.

Modeling of high-frequency characteristics for epoxy-sealed micro vacuum capacitors.

Analysis of ESD discharge current distribution and area optimization of VDMOS gate protection structure.

Generating sub-1V reference voltages from a resistorless CMOS bandgap reference circuit by using a piecewise curvature temperature compensation technique.

Modeling the charge transport mechanism in amorphous Al₂O₃ with multiphonon trap ionization effect.

An Energy Efficient Half-Static Clock-Gating d-Type flip-Flop.

Effects of periphery encapsulation material on the characteristics of micro vacuum dielectric capacitor.

Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors.

Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors.

Temperature-dependent light-emitting characteristics of InGaN/GaN diodes.

Silicon oxynitride integrated waveguide for on-chip optical interconnects applications.

Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation.

Silicon integrated photonics begins to revolutionize.

Single band electronic conduction in hafnium oxide prepared by atomic layer deposition.

Characterization and modeling of flicker noise in junction field-effect transistor with source and drain trench isolation.

Minimizing hydrogen content in silicon oxynitride by thermal oxidation of silicon-rich silicon nitride.

Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO₂/metal structures.

Dielectric breakdown characteristics and interface trapping of hafnium oxide films.

Conduction mechanisms in MOS gate dielectric films.

Low-frequency noise study in electron devices: review and update.

Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing.

Onefold coordinated oxygen atom: an electron trap in the silicon oxide.

Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride.

Ultra-shallow n⁺p junction formed by PH₃ and AsH₃ plasma immersion ion implantation.

Defects in silicon oxynitride gate dielectric films.

Recent developments in silicon optoelectronic devices.

A novel approach for fabricating light-emitting porous polysilicon films.

Investigation of the surface silica layer on porous poly-Si thin films.

SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer.