An AND-type 1T-FeFET array with robust write and read operations.

Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs.

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.

Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions.

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

Total ionizing dose effects and annealing behaviors of HfO₂-based MOS capacitor.