Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics.
Proceedings of the 44th International Convention on Information, 2021
Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy.
Proceedings of the 44th International Convention on Information, 2021
Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures.
Proceedings of the 44th International Convention on Information, 2021
MBE-Grown Ge0.92Sn0.08 Diode on RPCVD-Grown Partially Relaxed Virtual Ge0.92Sn0.08 Substrate.
Proceedings of the 44th International Convention on Information, 2021
Characterization of Fe Micromagnets for Semiconductor Spintronics by In-Field Magnetic Force Microscopy.
Proceedings of the 44th International Convention on Information, 2021
Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers.
Proceedings of the 43rd International Convention on Information, 2020
Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy.
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019
Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well.
Proceedings of the 42nd International Convention on Information and Communication Technology, 2019
Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates.
Proceedings of the 41st International Convention on Information and Communication Technology, 2018
Impact of Sn segregation on Ge1-xSnx epi-layers growth by RP-CVD.
Proceedings of the 40th International Convention on Information and Communication Technology, 2017