2012
Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT.
[DOI]
Sameh G. Khalil
,
Rongming Chu
,
Ray Li
,
Danny Wong
,
Scott Newell
,
Xu Chen
,
M. Chen
,
D. Zehnder
,
S. Kim
,
A. Corrion
,
Brian Hughes
,
Karim Boutros
,
C. Namuduri
Proceedings of the 2012 European Solid-State Device Research Conference, 2012