Editor's note.

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation.

Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry.

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs.

An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices.

Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks.

High-temperature performance of state-of-the-art triple-gate transistors.

Study of the linear kink effect in PD SOI nMOSFETs.

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.

Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation.

The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs.

Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS.

Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs.

Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation.

Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle.

Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation.

Reliability of polycrystalline silicon thin film resistors.