First Demonstration of Monolithic Three-Dimensional Integration of Ultra-High Density Hybrid IGZO/Si SRAM and IGZO 2T0C DRAM Achieving Record-Low Latency (5000s).

First Demonstration of High-Sensitivity (NEP 1fW^1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors.

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application.

Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm, max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec.