2017
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.
[DOI]
Chulbum Kim
,
Ji-Ho Cho
,
Woopyo Jeong
,
Il-Han Park
,
Hyun Wook Park
,
Doo-Hyun Kim
,
Daewoon Kang
,
Sunghoon Lee
,
Ji-Sang Lee
,
Wontae Kim
,
Jiyoon Park
,
Yang-Lo Ahn
,
Jiyoung Lee
,
Jong-Hoon Lee
,
Seungbum Kim
,
Hyun-Jun Yoon
,
Jaedoeg Yu
,
Nayoung Choi
,
Yelim Kwon
,
Nahyun Kim
,
Hwajun Jang
,
Jonghoon Park
,
Seunghwan Song
,
Yongha Park
,
Jinbae Bang
,
Sangki Hong
,
Byunghoon Jeong
,
Hyun-Jin Kim
,
Chunan Lee
,
Young-Sun Min
,
Inryul Lee
,
In-Mo Kim
,
Sunghoon Kim
,
Dongkyu Yoon
,
Ki-Sung Kim
,
Youngdon Choi
,
Moosung Kim
,
Hyunggon Kim
,
Pansuk Kwak
,
Jeong-Don Ihm
,
Dae-Seok Byeon
,
Jin-Yub Lee
,
Ki-Tae Park
,
Kyehyun Kyung
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017