Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor Transistors.

First Demonstration of BEOL-Compatible 3D Vertical FeNOR.

Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F² High-Density Integration.

First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs.

Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding.

First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×10⁹ Endurance, and 58.3% Area Saving.

Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection.

First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform.

Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V).

First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit.

BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.

First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection.

Performance Evaluation of Static Random Access Memory (SRAM) based on Negative Capacitance FinFET.