First Demonstration of High Retention Energy Barriers and 2 ns Switching, Using Magnetic Ordered-Alloy-Based STT MRAM Devices.
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Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions.
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Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Classes of Ulm type and coding rank-homogeneous trees in other structures.
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