2020
22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020

2017
23.4 An extremely low-standby-power 3.733Gb/s/pin 2Gb LPDDR4 SDRAM for wearable devices.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

Dual-loop 2-step ZQ calibration for dedicated power supply voltage in LPDDR4 SDRAM.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2017