A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme.
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IEEE J. Solid State Circuits, 2021
22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme.
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Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
Design of non-contact 2Gb/s I/O test methods for high bandwidth memory (HBM).
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Proceedings of the IEEE Asian Solid-State Circuits Conference, 2016