2023
Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited).
[DOI]
William Vandendaele
,
Camille Leurquin
,
R. Lavieville
,
Marie-Anne Jaud
,
Abygaël Viey
,
Romain Gwoziecki
,
B. Mohamad
,
Etienne Nowak
,
Aurore Constant
,
Ferdinando Iucolano
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs.
[DOI]
Camille Leurquin
,
William Vandendaele
,
Romain Gwoziecki
,
B. Mohamad
,
Ghislain Despesse
,
Ferdinando Iucolano
,
Roberto Modica
,
Aurore Constant
Proceedings of the IEEE International Reliability Physics Symposium, 2023