On the current conduction mechanisms of CeO₂/La₂O₃ stacked gate dielectric.

Temperature dependences of threshold voltage and drain-induced barrier lowering in 60 nm gate length MOS transistors.

Thermal and voltage instabilities of hafnium oxide films prepared by sputtering technique.

Improving the electrical characteristics of MOS transistors with CeO₂/La₂O₃ stacked gate dielectric.