13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by 'L-S Network'.
IEICE Trans. Electron., September, 2022
Comparison of switching performance between GaN and SiC MOSFET via 13. 56MHz Half-bridge Inverter.
Proceedings of the 29th IEEE International Symposium on Industrial Electronics, 2020
Soft-Switching Control Circuit Based on Traveling and Reflected Waves for High-Frequency Resonant Inverter Applicable to Capacitive Load Impedance.
Proceedings of the IECON 2018, 2018