Monolithic Complementary Field Effect Transistors (CFET) Demonstrated using Middle Dielectric Isolation and Stacked Contacts.
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Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET.
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Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Reliability challenges in Forksheet Devices: (Invited Paper).
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Proceedings of the IEEE International Reliability Physics Symposium, 2023
Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections.
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Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper.
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Proceedings of the International Conference on IC Design and Technology, 2021
Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling.
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Proceedings of the 2018 International Conference on IC Design & Technology, 2018
Scaling CMOS beyond Si FinFET: an analog/RF perspective.
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Proceedings of the 48th European Solid-State Device Research Conference, 2018
Beyond-Si materials and devices for more Moore and more than Moore applications.
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Proceedings of the International Conference on IC Design and Technology, 2016