Bottom-up methodology for predictive simulations of self-heating in aggressively scaled process technologies.
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Proceedings of the IEEE International Reliability Physics Symposium, 2018
Ambient temperature and layout impact on self-heating characterization in FinFET devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Impact of RTN on stochastic BTI degradation in scaled metal gate/high-k CMOS technologies.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Reliability screening of high-k dielectrics based on voltage ramp stress.
Microelectron. Reliab., 2007
Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides.
Microelectron. Reliab., 2006