Attilio Belmonte

According to our database1, Attilio Belmonte authored at least 13 papers between 2015 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Fundamental understanding of NBTI degradation mechanism in IGZO channel devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification.
Proceedings of the IEEE International Memory Workshop, 2024

2023
Lowest IOFF < 3×10<sup>-21</sup> A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays.
Proceedings of the IEEE International Memory Workshop, 2023

2022
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control.
Proceedings of the International Conference on IC Design and Technology, 2022

2021
Process-induced charging damage in IGZO nTFTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2017
Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament.
Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017

2015
Conductive filaments multiplicity as a variability factor in CBRAM.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM.
Proceedings of the 45th European Solid State Device Research Conference, 2015


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