Atsushi Shimbori

According to our database, Atsushi Shimbori authored at least 6 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs.

Limeng Shi, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress.

Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu, Shengnan Zhu

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs.

Shengnan Zhu, Limeng Shi, Michael Jin, Jiashu Qian, Monikuntala Bhattacharya, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal, Tianshi Liu, Atsushi Shimbori, Chingchi Chen

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs.

Limeng Shi, Shengnan Zhu, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu

Proceedings of the IEEE International Reliability Physics Symposium, 2023

$\alpha$-Ga2O3/Diamond Heterojunction PN Diode: Device Fabrication and TCAD Modelling.

Cristian J. Herrera-Rodriguez, Atsushi Shimbori, Timothy A. Grotjohn

Proceedings of the Device Research Conference, 2023

2021

Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer.

Atsushi Shimbori, Alex Q. Huang

Proceedings of the Device Research Conference, 2021