Asif Islam Khan

According to our database, Asif Islam Khan authored at least 22 papers between 2007 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions.

Priyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, Khandker Akif Aabrar, Taeyoung Song, Sharadindu Gopal Kirtania, Dipjyoti Das, Chinsung Park, Nashrah Afroze, Mengkun Tian, Shimeng Yu, Ahmad Ehtesham Islam, Suman Datta, Souvik Mahapatra, Asif Islam Khan

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation.

Dipjyoti Das, Lance Fernandes, Prasanna Venkatesan Ravindran, Taeyoung Song, Chinsung Park, Nashrah Afroze, Mengkun Tian, Hang Chen, Winston Chem, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Islam Khan

Proceedings of the IEEE International Memory Workshop, 2024

2023

Cold-FeFET as Embedded Non-Volatile Memory with Unlimited Cycling Endurance.

Sharadindu Gopal Kirtania, Khandker Akif Aabrar, Asif Islam Khan, Shimeng Yu, Samyak Datta

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors.

Omkar Phadke, Khandker Akif Aabrar, Yuan-chun Luo, Sharadindu Gopal Kirtania, Asif Islam Khan, Suman Datta, Shimeng Yu

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Design of Ferroelectric-Metal Field-Effect Transistor for Multi-Level-Cell 3D NAND Flash.

Sola Woo, Gihun Choe, Asif Islam Khan, Suman Datta, Shimeng Yu

Proceedings of the IEEE International Memory Workshop, 2023

2022

Nonvolatile Capacitive Crossbar Array for In-Memory Computing.

Jae Hur, Yuan-Chun Luo, Anni Lu, Tzu-Han Wang, Shaolan Li, Asif Islam Khan, Shimeng Yu

Adv. Intell. Syst., 2022

Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling.

Gihun Choe, Prasanna Venkatesan Ravindran, Anni Lu, Jae Hur, Maximilian Lederer, André Reck, Sarah Lombardo, Nashrah Afroze, Josh Kacher, Asif Islam Khan, Shimeng Yu

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Improved Endurance with Electron-Only Switching in Ferroelectric Devices.

Zheng Wang, Nujhat Tasneem, Hang Chen, Shimeng Yu, Winston Chern, Asif Islam Khan

Proceedings of the Device Research Conference, 2022

2021

A Technology Path for Scaling Embedded FeRAM to 28nm with 2T1C Structure.

Jae Hur, Yuan-Chun Luo, Zheng Wang, Wonbo Shim, Asif Islam Khan, Shimeng Yu

Proceedings of the IEEE International Memory Workshop, 2021

Experimental RF Characterization of Ferroelectric Hafnium Zirconium Oxide Material at GHz for Microwave Applications.

Boce Lin, Gihun Choe, Jae Hur, Asif Islam Khan, Shimeng Yu, Hua Wang

Proceedings of the Device Research Conference, 2021

Characterization of Drain Current Variations in FeFETs for PIM-based DNN Accelerators.

Nathan Eli Miller, Zheng Wang, Saurabh Dash, Asif Islam Khan, Saibal Mukhopadhyay

Proceedings of the 3rd IEEE International Conference on Artificial Intelligence Circuits and Systems, 2021

2020

Modeling Multi-states in Ferroelectric Tunnel Junction.

Yuan-Chun Luo, Jae Hur, Panni Wang, Asif Islam Khan, Shimeng Yu

Proceedings of the 2020 Device Research Conference, 2020

2019

Investigating Dynamic Minor Loop of Ferroelectric Capacitor.

Panni Wang, Zheng Wang, Nujhat Tasneem, Jar Hur, Asif Islam Khan, Shimeng Yu

Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019

Cryogenic Characterization of Antiferroelectric Zirconia down to 50 mK.

Zheng Wang, Hanbin Ying, Nujhat Tasneem, Anthony Gaskell, John D. Cressler, Martin Mourigal, Asif Islam Khan

Proceedings of the Device Research Conference, 2019

Ferroelectrics, Negative Capacitance and Depolarization Field: What exactly is negative capacitance?

Asif Islam Khan

Proceedings of the Device Research Conference, 2019

2018

A ferroelectric FET based power-efficient architecture for data-intensive computing.

Yun Long, Taesik Na, Prakshi Rastogi, Karthik Rao, Asif Islam Khan, Sudhakar Yalamanchili, Saibal Mukhopadhyay

Proceedings of the International Conference on Computer-Aided Design, 2018

On the Possibility of Dynamically Tuning and Collapsing the Ferroelectric Hysteresis/Memory Window in an Asymmetric DG MOS Device: A Path to a Reconfigurable Logic-Memory Device.

Nujhat Tasneem, Asif Islam Khan

Proceedings of the 76th Device Research Conference, 2018

2017

Full chip power benefits with negative capacitance FETs.

Sandeep Kumar Samal, Sourabh Khandelwal, Asif Islam Khan, Sayeef S. Salahuddin, Chenming Hu, Sung Kyu Lim

Proceedings of the 2017 IEEE/ACM International Symposium on Low Power Electronics and Design, 2017

2016

Nonvolatile memory design based on ferroelectric FETs.

Sumitha George, Kaisheng Ma, Ahmedullah Aziz, Xueqing Li, Asif Islam Khan, Sayeef S. Salahuddin, Meng-Fan Chang, Suman Datta, John Sampson, Sumeet Kumar Gupta, Vijaykrishnan Narayanan

Proceedings of the 53rd Annual Design Automation Conference, 2016

2011

Some Basic Ternary Operations Using Toffoli Gates Along with the Cost of Implementation.

Ayan Kumar Biswas, Shuvro Chowdhury, Md. Mahmud Muntakim Khan, Masud Hasan, Asif Islam Khan

Proceedings of the 41st IEEE International Symposium on Multiple-Valued Logic, 2011

2009

Synthesis of GF(3) Based Reversible/Quantum Logic Circuits without Garbage Output.

Md. Mahmud Muntakim Khan, Ayan Kumar Biswas, Shuvro Chowdhury, Masud Hasan, Asif Islam Khan

Proceedings of the ISMVL 2009, 2009

2007

Quantum Realization of Some Ternary Circuits Using Muthukrishnan-Stroud Gates.

Asif Islam Khan, Nadia Nusrat, Samira Manabi Khan, Masud Hasan, Mozammel H. A. Khan

Proceedings of the 37th International Symposium on Multiple-Valued Logic, 2007