Arno Stockman

According to our database1, Arno Stockman authored at least 8 papers between 2017 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Links

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Bibliography

2024
$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022
Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors.
Microelectron. Reliab., 2018

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron.
Proceedings of the 47th European Solid-State Device Research Conference, 2017


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