Arnaud Curutchet
According to our database1,
Arnaud Curutchet
authored at least 13 papers
between 2003 and 2018.
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Bibliography
2018
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2017
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices.
Microelectron. Reliab., 2017
Proceedings of the 29th International Conference on Microelectronics, 2017
2016
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress.
Microelectron. Reliab., 2016
2015
Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes.
Microelectron. Reliab., 2015
Microelectron. Reliab., 2015
2013
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.
Microelectron. Reliab., 2013
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.
Microelectron. Reliab., 2013
2012
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.
Microelectron. Reliab., 2012
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2009
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs.
Microelectron. Reliab., 2009
2006
Microelectron. Reliab., 2006
2003
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.
Microelectron. Reliab., 2003