Arash Salemi

According to our database, Arash Salemi authored at least 5 papers between 2017 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs.

Shengnan Zhu, Tianshi Liu, Marvin H. White, Anant K. Agarwal, Arash Salemi, David Sheridan

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs.

Susanna Yu, Tianshi Liu, Shengnan Zhu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs.

Tianshi Liu, Shengnan Zhu, Susanna Yu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, Anant K. Agarwal

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Design Strategies for Rugged SiC Power Devices.

Diang Xing, Tianshi Liu, Susanna Yu, Minseok Kang, Arash Salemi, Marvin H. White, Anant K. Agarwal

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2017

Gated base structure for improved current gain in SiC bipolar technology.

B. Gunnar Malm, Hossein Elahipanah, Arash Salemi, Mikael Östling

Proceedings of the 47th European Solid-State Device Research Conference, 2017