Antonio Arreghini
According to our database1,
Antonio Arreghini
authored at least 13 papers
between 2008 and 2024.
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Bibliography
2024
Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Proceedings of the IEEE International Memory Workshop, 2024
Proceedings of the IEEE International Memory Workshop, 2024
2023
Proceedings of the IEEE International Memory Workshop, 2023
Proceedings of the IEEE International Memory Workshop, 2023
2022
Proceedings of the IEEE International Memory Workshop, 2022
Proceedings of the IEEE International Memory Workshop, 2022
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction.
Proceedings of the IEEE International Memory Workshop, 2022
2021
Proceedings of the IEEE International Memory Workshop, 2021
2019
Proceedings of the IEEE International Reliability Physics Symposium, 2019
2014
Assessment methodology of the lateral migration component in data retention of 3D SONOS memories.
Microelectron. Reliab., 2014
2008
Characterization and modeling of Non volatile memory cells based on localized trapping materials.
PhD thesis, 2008