Antoine D. Touboul

According to our database, Antoine D. Touboul authored at least 10 papers between 2011 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Development and evaluation of a flexible instrumentation layer for system-level testing of radiation effects.

Israel C. Lopes, Vincent Pouget, Frederic Wrobel, Frédéric Saigné, Antoine D. Touboul, Ketil Røed

Proceedings of the IEEE Latin-American Test Symposium, 2020

Evaluation and Analysis of Technologies for Robotic Platforms for the Nuclear Decommissioning.

Georgios Tsiligiannis, Antoine D. Touboul, Gaëtan Bricas, Tadec Maraine, Jerome Boch, Frederic Wrobel, Alain Michez, Frédéric Saigné, Alain Godot, Asenath Etile, Thibaud Durand, Romain Sueur, Didier Farigoule, Philippe Girones

Proceedings of the 15th Design & Technology of Integrated Systems in Nanoscale Era, 2020

Effect of Temperature on Single Event Latchup Sensitivity.

S. Guagliardo, Frederic Wrobel, Ygor Q. Aguiar, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Vincent Pouget, Antoine D. Touboul

Proceedings of the 15th Design & Technology of Integrated Systems in Nanoscale Era, 2020

2018

Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions.

Ygor Q. Aguiar, Frederic Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Antoine D. Touboul, Vincent Pouget

Microelectron. Reliab., 2018

2017

A calculation method to estimate single event upset cross section.

Frederic Wrobel, Antoine D. Touboul, Vincent Pouget, Luigi Dilillo, Jerome Boch, Frédéric Saigné

Microelectron. Reliab., 2017

2013

Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET.

Alain Michez, Jerome Boch, S. Dhombres, Frédéric Saigné, Antoine D. Touboul, J.-R. Vaillé, Laurent Dusseau, E. Lorfèvre, R. Ecoffet

Microelectron. Reliab., 2013

Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model.

K. Guetarni, Antoine D. Touboul, Jerome Boch, L. Foro, A. Privat, Alain Michez, J.-R. Vaillé, Frédéric Saigné

Microelectron. Reliab., 2013

2012

On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum.

Antoine D. Touboul, L. Foro, Frederic Wrobel, Frédéric Saigné

Microelectron. Reliab., 2012

Evaluation of test algorithms stress effect on SRAMs under neutron radiation.

Georgios Tsiligiannis, Luigi Dilillo, Alberto Bosio, Patrick Girard, Aida Todri, Arnaud Virazel, Antoine D. Touboul, Frederic Wrobel, Frédéric Saigné

Proceedings of the 18th IEEE International On-Line Testing Symposium, 2012

2011

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors.

R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné

Microelectron. Reliab., 2011