Ansh

According to our database, Ansh authored at least 4 papers between 2020 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2023

Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETs.

Utpreksh Patbhaje, Rupali Verma, Jeevesh Kumar, Ansh, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2020

Physical Insights into Phosphorene Transistor Degradation Under Exposure to Atmospheric Conditions and Electrical Stress.

Jeevesh Kumar, Ansh, Asha Yadav, Anant Singh, Andrew Naclerio, Dmitri N. Zakharov, Piran Kidambi, Mayank Shrivastava

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel.

Ansh, Gaurav Sheoran, Jeevesh Kumar, Mayank Shrivastava

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight.

Jeevesh Kumar, Ansh, Hemanjaneyulu Kuruva, Mayank Shrivastava

Proceedings of the 2020 Device Research Conference, 2020