Annunziata Sanseverino

According to our database, Annunziata Sanseverino authored at least 18 papers between 2003 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests.

Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2018

Measure of high frequency input impedance to study the instability of power devices in short circuit.

Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2018

Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation.

Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2018

2017

Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit.

Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2017

2015

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT.

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2015

2014

Turn-off instabilities in large area IGBTs.

Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory

Microelectron. Reliab., 2014

Thermal damage in SiC Schottky diodes induced by SE heavy ions.

Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2014

2013

Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit.

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2013

2012

Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure.

Giovanni Busatto, Valentina De Luca, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2012

Reliability oriented design of power supplies for high energy physics applications.

Stefania Baccaro, Giovanni Busatto, Mauro Citterio, Paolo Cova, Nicola Delmonte, Francesco Iannuzzo, Agostino Lanza, Marco Riva, Annunziata Sanseverino, Giorgio Spiazzi

Microelectron. Reliab., 2012

2011

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs.

Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, L. Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss

Microelectron. Reliab., 2011

2010

Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET.

Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2010

2009

Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions.

Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2009

2008

Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure.

Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2008

2006

Experimental study of power MOSFET's gate damage in radiation environment.

Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò

Microelectron. Reliab., 2006

2005

Experimental and Numerical investigation about SEB/SEGR of Power MOSFET.

Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò

Microelectron. Reliab., 2005

2004

The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure.

Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina

Microelectron. Reliab., 2004

2003

Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment.

Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina

Microelectron. Reliab., 2003