Anjan Chakravorty

Affiliations:
  • Indian Institute of Technology, Madras, India


According to our database1, Anjan Chakravorty authored at least 17 papers between 2010 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Thermal Crosstalk Analysis in ReRAM Passive Crossbar Arrays.
Proceedings of the 37th International Conference on VLSI Design and 23rd International Conference on Embedded Systems, 2024

2023
Thermal Crosstalk Analysis in RRAM Passive Crossbar Arrays.
CoRR, 2023

Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone Quantified.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Electro-Thermal Investigation of SiGe HBTs: A Review.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022
2D-Motion Detection using SNNs with Graphene-Insulator-Graphene Memristive Synapses.
Proceedings of the 29th IEEE International Conference on Electronics, Circuits and Systems, 2022

Extraction of Emitter Series Resistance Along With Collector and Thermal Resistances in Silicon Bipolar Transistors.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

Significance of Equivalent Channel Temperature in Compact Modeling of GaN HEMTs.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

Modeling Dynamic Lateral Current Crowding in SiGe HBTs.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021
Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2019
Collector-substrate modeling of SiGe HBTs up to THz range.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2017
Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit.
Microelectron. Reliab., 2017

2016
Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015
Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit.
Microelectron. Reliab., 2015

2014
Design and modeling of high-Q variable width and spacing, planar and 3-D stacked spiral inductors.
Proceedings of the 18th International Symposium on VLSI Design and Test, 2014

2010
Compact Hierarchical Bipolar Transistor Modeling With HiCUM
International Series on Advances in Solid State Electronics and Technology, World Scientific, ISBN: 978-981-4468-19-0, 2010


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