Anjan Chakravorty
Affiliations:- Indian Institute of Technology, Madras, India
According to our database1,
Anjan Chakravorty
authored at least 17 papers
between 2010 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
Online presence:
-
on iitm.ac.in
On csauthors.net:
Bibliography
2024
Proceedings of the 37th International Conference on VLSI Design and 23rd International Conference on Embedded Systems, 2024
2023
Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone Quantified.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023
2022
Proceedings of the 29th IEEE International Conference on Electronics, Circuits and Systems, 2022
Extraction of Emitter Series Resistance Along With Collector and Thermal Resistances in Silicon Bipolar Transistors.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022
2021
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021
2019
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019
TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019
2017
Microelectron. Reliab., 2017
2016
Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations.
Proceedings of the 46th European Solid-State Device Research Conference, 2016
2015
Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit.
Microelectron. Reliab., 2015
2014
Design and modeling of high-Q variable width and spacing, planar and 3-D stacked spiral inductors.
Proceedings of the 18th International Symposium on VLSI Design and Test, 2014
2010
International Series on Advances in Solid State Electronics and Technology, World Scientific, ISBN: 978-981-4468-19-0, 2010