Angsuman Sarkar
Orcid: 0000-0002-8709-7532
According to our database1,
Angsuman Sarkar
authored at least 14 papers
between 2012 and 2022.
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Bibliography
2022
Introduction to the special section on State-of-the-art Micro-Nano devices and systems.
Comput. Electr. Eng., 2022
Impact of Interface Trap Charges on the Performances of Junctionless MOSFET in Sub-Threshold Regime.
Comput. Electr. Eng., 2022
Analytical modeling of dielectrically modulated broken-gate tunnel FET biosensor considering partial hybridization effect.
Comput. Electr. Eng., 2022
Performance enhancement of normally off InAlN/AlN/GaN HEMT using aluminium gallium nitride back barrier.
Comput. Electr. Eng., 2022
2021
Int. J. High Perform. Syst. Archit., 2021
Decoupling Capacitor Estimation and Allocation using Optimization Techniques for Power Supply Noise Reduction in System-on-Chip.
J. Electron. Test., 2021
2020
Soft Computing Techniques Based CAD Approach for Power Supply Noise Reduction in System-on-Chip.
J. Electron. Test., 2020
2019
Novel Threshold Voltage Model Incorporating Band-to-Band Tunneling in Heterostructure p-MOSFET.
Proceedings of the IEEE International Symposium on Smart Electronic Systems, 2019
2018
Blueshift of Optical Signal in PhC Based Butterworth Filter Due to Joule Heat Dissipation.
Proceedings of the Computational Intelligence, Communications, and Business Analytics, 2018
2017
Radio frequency/analog and linearity performance of a junctionless double gate metal-oxide-semiconductor field-effect transistor.
Simul., 2017
Spacer engineering for performance enhancement of junctionless accumulation-mode bulk FinFETs.
IET Circuits Devices Syst., 2017
2016
Impact of Fin Width Scaling on RF/Analog Performance of Junctionless Accumulation-Mode Bulk FinFET.
ACM J. Emerg. Technol. Comput. Syst., 2016
2012
Microelectron. J., 2012
1/f noise and analogue performance study of short-channel cylindrical surrounding gate MOSFET using a new subthreshold analytical pseudo-two-dimensional model.
IET Circuits Devices Syst., 2012