Angelo Raciti
According to our database1,
Angelo Raciti
authored at least 24 papers
between 1994 and 2019.
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Bibliography
2019
Efficiency of state-of-the-art GaN devices in a synchronous-rectifier buck converter.
Proceedings of the IECON 2019, 2019
Proceedings of the IECON 2019, 2019
2018
A 5G platform for Unmanned Aerial Monitoring in Rural Areas: Design and Performance Issues.
Proceedings of the 4th IEEE Conference on Network Softwarization and Workshops, 2018
Modeling of the Power Losses due to Coss in SJ MOSFETs Submitted to ZVS: Identification of the Passive Parameters by a Genetic Algorithm.
Proceedings of the IECON 2018, 2018
Proceedings of the IECON 2018, 2018
2017
Determination of the power losses due to the nonlinear coss capacitance of SJ MOSFETs submitted to voltage transients in ZVS applications.
Proceedings of the IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, Beijing, China, October 29, 2017
Proceedings of the 2017 IEEE Industry Applications Society Annual Meeting, 2017
2016
A new thermal model for power MOSFET devices accounting for the behavior in unclamped inductive switching.
Microelectron. Reliab., 2016
Modeling of planar coils for wireless power transfer systems including substrate effects.
Proceedings of the IECON 2016, 2016
2015
IEEE Trans. Ind. Electron., 2015
A reexamination of voltage distortion for classical carrier-based vs B-Spline modulation of three-phase Voltage Sources Inverters.
Proceedings of the 24th IEEE International Symposium on Industrial Electronics, 2015
Proceedings of the 24th IEEE International Symposium on Industrial Electronics, 2015
2014
Layered electro-thermal model of high-end integrated power electronics modules with IGBTs.
Proceedings of the IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society, Dallas, TX, USA, October 29, 2014
2013
GaN HEMT devices: Experimental results on normally-on, normally-off and cascode configuration.
Proceedings of the IECON 2013, 2013
A bi-dimensional model for power MOSFET devices accounting for the behavior in unclamped inductive switching conditions.
Proceedings of the IECON 2013, 2013
Electro-thermal model of Integrated Power Electronics Modules based on an innovative layered approach.
Proceedings of the IECON 2013, 2013
2008
IEEE Trans. Ind. Electron., 2008
A Physics-Based Model for a SiC JFET Device Accounting for the Mobility Dependence on Temperature and Electric Field.
Proceedings of the Industry Applications Society Annual Meeting, 2008
2007
Generalized PWM-VSI Control Algorithm Based on a Universal Duty-Cycle Expression: Theoretical Analysis, Simulation Results, and Experimental Validations.
IEEE Trans. Ind. Electron., 2007
Robustness Evaluation of MOSFETs by Equivalent Cell Behavioral Model of the Gate Parasitic Resistance.
Proceedings of the Conference Record of the 2007 IEEE Industry Applications Conference Forty-Second IAS Annual Meeting, 2007
Experimental Investigation of Monolithic Cascode Devices in Inverter Leg Applications.
Proceedings of the Conference Record of the 2007 IEEE Industry Applications Conference Forty-Second IAS Annual Meeting, 2007
2005
Efficiency Enhancement of Permanent-Magnet Synchronous Motor Drives by Online Loss Minimization Approaches.
IEEE Trans. Ind. Electron., 2005
2001
Control of the switching transients of IGBT series strings by high-performance drive units.
IEEE Trans. Ind. Electron., 2001
1994
IEEE Trans. Ind. Electron., 1994