Andriy Hikavyy

According to our database, Andriy Hikavyy authored at least 8 papers between 2016 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning.

Hans Mertens, M. Hosseini, Thomas Chiarella, D. Zhou, S. Wang, G. Mannaert, E. Dupuy, D. Radisic, Z. Tao, Yusuke Oniki, Andriy Hikavyy, R. Rosseel, A. Mingardi, S. Choudhury, P. Puttarame Gowda, F. Sebaai, A. Peter, Kevin Vandersmissen, J. P. Soulie, An De Keersgieter, L. Petersen Barbosa Lima, C. Cavalcante, D. Batuk, G. T. Martinez, J. Geypen, F. Seidel, K. Paulussen, P. Favia, Jürgen Bömmels, Roger Loo, P. Wong, A. Sepulveda Marquez, B. T. Chan, Jérôme Mitard, S. Subramanian, S. Demuynck, E. Dentoni Litta, N. Horiguchi, S. Samavedam, S. Biesemans

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Comprehensive 300 mm process for Silicon spin qubits with modular integration.

A. Elsayed, Clement Godfrin, Nard I. Dumoulin Stuyck, M. M. K. Shehata, Stefan Kubicek, S. Massar, Yann Canvel, Julien Jussot, Andriy Hikavyy, Roger Loo, George Simion, Massimo Mongillo, D. Wan, Bogdan Govoreanu, Ruoyu Li, Iuliana P. Radu, Pol Van Dorpe, Kristiaan De Greve

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails.

Anabela Veloso, Anne Jourdain, D. Radisic, Rongmei Chen, G. Arutchelvan, B. O'Sullivan, Hiroaki Arimura, Michele Stucchi, An De Keersgieter, M. Hosseini, T. Hopf, K. D'Have, S. Wang, E. Dupuy, G. Mannaert, Kevin Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Yusuke Oniki, X. Zhou, A. Gupta, Tom Schram, B. Briggs, C. Lorant, E. Rosseel, Andriy Hikavyy, Roger Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, Katia Devriendt, B. T. Chan, S. Demuynck, Gaspard Hiblot, Geert Van der Plas, Julien Ryckaert, Gerald Beyer, E. Dentoni Litta, Eric Beyne, Naoto Horiguchi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections.

A. Vandooren, N. Parihar, Jacopo Franco, Roger Loo, Hiroaki Arimura, R. Rodriguez, F. Sebaai, S. Iacovo, Kevin Vandersmissen, W. Li, G. Mannaert, D. Radisic, E. Rosseel, Andriy Hikavyy, Anne Jourdain, O. Mourey, G. Gaudin, Shay Reboh, L. Le Van-Jodin, Guillaume Besnard, C. Roda Neve, Bich-Yen Nguyen, Iuliana P. Radu, E. Dentoni Litta, N. Horiguchi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Innovations in Transistor Architecture and Device Connectivity for Advanced Logic Scaling.

Anabela Veloso, Geert Eneman, An De Keersgieter, P. Favia, Andriy Hikavyy, Rongmei Chen, Anne Jourdain, N. Horiguchi

Proceedings of the International Conference on IC Design and Technology, 2022

2018

Scalability comparison between raised- and embedded-SiGe source/drain structures for Si_0.55Ge_0.45 implant free quantum well pFET.

Shimpei Yamaguchi, Liesbeth Witters, Jérôme Mitard, Geert Eneman, Geert Hellings, Andriy Hikavyy, Roger Loo, Naoto Horiguchi

Microelectron. Reliab., 2018

Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling.

A. Vandooren, Liesbeth Witters, Jacopo Franco, Arindam Mallik, Bertrand Parvais, Z. Wu, Amey Walke, V. Deshpande, E. Rosseel, Andriy Hikavyy, W. Li, L. Peng, Nouredine Rassoul, Geraldine Jamieson, Fumihiro Inoue, G. Verbinnen, Katia Devriendt, Lieve Teugels, N. Heylen, E. Vecchio, T. Zheng, Niamh Waldron, Vincent De Heyn, Dan Mocuta, Nadine Collaert

Proceedings of the 2018 International Conference on IC Design & Technology, 2018

2016

Towards high performance sub-10nm finW bulk FinFET technology.

Thomas Chiarella, Stefan Kubicek, E. Rosseel, Romain Ritzenthaler, Andriy Hikavyy, P. Eyben, An De Keersgieter, L.-Å. Ragnarsson, M.-S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, Dan Mocuta, Anda Mocuta, Aaron Voon-Yew Thean

Proceedings of the 46th European Solid-State Device Research Conference, 2016