Andrii Stefanskyi

According to our database1, Andrii Stefanskyi authored at least 3 papers between 2017 and 2018.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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PhD thesis 
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Links

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Bibliography

2018
Universal Behavioural Model for SiC Power MOSFETs Under Forward Bias.
Proceedings of the 25th International Conference "Mixed Design of Integrated Circuits and System", 2018

2017
Review of commercial SiC MOSFET models: Validity and accuracy.
Proceedings of the 24th International Conference Mixed Design of Integrated Circuits and Systems, 2017

Review of commercial SiC MOSFET models: Topologies and equations.
Proceedings of the 24th International Conference Mixed Design of Integrated Circuits and Systems, 2017


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