Andrey Kosarev

According to our database1, Andrey Kosarev authored at least 13 papers between 2011 and 2016.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of six.

Timeline

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Bibliography

2016
Effect of germane in gas phase on electronic properties of GeXSiY: H alloys deposited by RF plasma discharge.
Proceedings of the 13th International Conference on Electrical Engineering, 2016

Study of optoelectronics properties of indium tin oxide films fabricated by sputtering in oxygen atmosphere.
Proceedings of the 13th International Conference on Electrical Engineering, 2016

Determination of photoelectric parameters of hydrogenated amorphous silicon by the photo electromotive-force technique.
Proceedings of the 13th International Conference on Electrical Engineering, 2016

High contrast distributed Bragg reflectors based on Si: H/SiC: H PECVD multilayer structure.
Proceedings of the 13th International Conference on Electrical Engineering, 2016

2015
Evolution of morphological characteristics of Si: H p-i-n structures deposited by plasma on "corning" substrates.
Proceedings of the 12th International Conference on Electrical Engineering, 2015

Effect of frontal interface configuration on electronic properties of organic-inorganic hybrid solar cells.
Proceedings of the 12th International Conference on Electrical Engineering, 2015

Study of electrical conductivity of PEDOT: PSS at temperatures >300 K for hybrid photovoltaic applications.
Proceedings of the 12th International Conference on Electrical Engineering, 2015

Effect of hydrogen dilution on morphology and electronic properties of silicon-germanium films deposited by RF plasma discharge.
Proceedings of the 12th International Conference on Electrical Engineering, 2015

SIMS analysis of atomic composition of silicon-germanium films deposited by RF plasma discharge.
Proceedings of the 12th International Conference on Electrical Engineering, 2015

2014
Study of morphological characteristics of Si: H p-i-n structures deposited by plasma on plastic substrates.
Proceedings of the 11th International Conference on Electrical Engineering, 2014

Effect of transparent conductive oxide material and frontal interface on characteristics of Si: H p-i-n junction.
Proceedings of the 11th International Conference on Electrical Engineering, 2014

2011
Study of doping of Ge0.96Si0.04: H films with B, and P during low frequency plasma deposition at low temperature.
Proceedings of the 8th International Conference on Electrical Engineering, 2011

Electronic properties of GeySi1-y: H films deposited by LF PECVD at low temperatures.
Proceedings of the 8th International Conference on Electrical Engineering, 2011


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