Andrey Kosarev
According to our database1,
Andrey Kosarev
authored at least 13 papers
between 2011 and 2016.
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Bibliography
2016
Effect of germane in gas phase on electronic properties of GeXSiY: H alloys deposited by RF plasma discharge.
Proceedings of the 13th International Conference on Electrical Engineering, 2016
Study of optoelectronics properties of indium tin oxide films fabricated by sputtering in oxygen atmosphere.
Proceedings of the 13th International Conference on Electrical Engineering, 2016
Determination of photoelectric parameters of hydrogenated amorphous silicon by the photo electromotive-force technique.
Proceedings of the 13th International Conference on Electrical Engineering, 2016
High contrast distributed Bragg reflectors based on Si: H/SiC: H PECVD multilayer structure.
Proceedings of the 13th International Conference on Electrical Engineering, 2016
2015
Evolution of morphological characteristics of Si: H p-i-n structures deposited by plasma on "corning" substrates.
Proceedings of the 12th International Conference on Electrical Engineering, 2015
Effect of frontal interface configuration on electronic properties of organic-inorganic hybrid solar cells.
Proceedings of the 12th International Conference on Electrical Engineering, 2015
Study of electrical conductivity of PEDOT: PSS at temperatures >300 K for hybrid photovoltaic applications.
Proceedings of the 12th International Conference on Electrical Engineering, 2015
Effect of hydrogen dilution on morphology and electronic properties of silicon-germanium films deposited by RF plasma discharge.
Proceedings of the 12th International Conference on Electrical Engineering, 2015
SIMS analysis of atomic composition of silicon-germanium films deposited by RF plasma discharge.
Proceedings of the 12th International Conference on Electrical Engineering, 2015
2014
Study of morphological characteristics of Si: H p-i-n structures deposited by plasma on plastic substrates.
Proceedings of the 11th International Conference on Electrical Engineering, 2014
Effect of transparent conductive oxide material and frontal interface on characteristics of Si: H p-i-n junction.
Proceedings of the 11th International Conference on Electrical Engineering, 2014
2011
Study of doping of Ge0.96Si0.04: H films with B, and P during low frequency plasma deposition at low temperature.
Proceedings of the 8th International Conference on Electrical Engineering, 2011
Electronic properties of GeySi1-y: H films deposited by LF PECVD at low temperatures.
Proceedings of the 8th International Conference on Electrical Engineering, 2011