Andrei Grebennikov
Orcid: 0000-0003-2636-7049
According to our database1,
Andrei Grebennikov
authored at least 18 papers
between 2008 and 2023.
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Bibliography
2023
Implementation of class-E/F<sub>3</sub> power amplifiers based on the variations of the MOSFET grading coefficient, built-in potential and output capacitance along with their roles in MOSFET selectivity.
Int. J. Circuit Theory Appl., March, 2023
2022
Broadband and Efficient Envelope Amplifier for Envelope Elimination and Restoration/Envelope Tracking Higher-Efficiency Power Amplifiers.
Sensors, 2022
A 1.1-to-2.7 GHz CMOS Power Amplifier with Digitally-Reconfigurable-Impedance Matching-Network (DRIMN) for Wideband Performance optimization.
Proceedings of the 17th Conference on Ph.D Research in Microelectronics and Electronics, 2022
2021
High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications.
IEICE Trans. Electron., 2021
A Wideband CMOS Power Amplifier with Integrated Digital Linearizer and Tunable Transformer.
Proceedings of the IEEE Asia Pacific Conference on Circuit and Systems, 2021
2020
Broadband RF Power Amplifier with Combination of Large Signal X-Parameter and Real Frequency Techniques.
IEICE Trans. Electron., 2020
Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters.
IEEE Access, 2020
Proceedings of the 18th IEEE International New Circuits and Systems Conference, 2020
Proceedings of the IEEE International Symposium on Circuits and Systems, 2020
2019
Exploring the Design Flexibility of the Class-E Power Amplifier with Shunt Capacitance and Shunt Filter.
Proceedings of the IEEE Radio and Wireless Symposium, 2019
Proceedings of the IEEE Radio and Wireless Symposium, 2019
2018
IEEE Trans. Circuits Syst. II Express Briefs, 2018
2016
High-Efficiency Class-E<sup>-1</sup> and Class-F/E Power Amplifiers at Any Duty Ratio.
IEEE Trans. Ind. Electron., 2016
IEEE Trans. Circuits Syst. I Regul. Pap., 2016
Effect of gate-to-drain and drain-to-source parasitic capacitances of MOSFET on the performance of Class-E/F<sub>3</sub> power amplifier.
IET Circuits Devices Syst., 2016
2012
Proc. IEEE, 2012
Proceedings of the 2012 IEEE Radio and Wireless Symposium, 2012
2008
IEEE Trans. Circuits Syst. I Regul. Pap., 2008