Andreea Balteanu

According to our database, Andreea Balteanu authored at least 6 papers between 2012 and 2016.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2016

A 234-261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4-7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output.

Stefan Shopov, Andreea Balteanu, Jürgen Hasch, Pascal Chevalier, Andreia Cathelin, Sorin P. Voinigescu

IEEE J. Solid State Circuits, 2016

2014

A 19 dBm, 15 Gbaud, 9 bit SOI CMOS Power-DAC Cell for High-Order QAM W-Band Transmitters.

Stefan Shopov, Andreea Balteanu, Sorin P. Voinigescu

IEEE J. Solid State Circuits, 2014

A High Modulation Bandwidth, 110 GHz Power-DAC Cell for IQ Transmitter Arrays With Direct Amplitude and Phase Modulation.

Andreea Balteanu, Stefan Shopov, Sorin P. Voinigescu

IEEE J. Solid State Circuits, 2014

Adaptive Circuit Design Methodology and Test Applied to Millimeter-Wave Circuits.

Jean-Olivier Plouchart, Fa Wang, Xin Li, Benjamin D. Parker, Mihai A. T. Sanduleanu, Andreea Balteanu, Bodhisatwa Sadhu, Alberto Valdes-Garcia, Daniel J. Friedman

IEEE Des. Test, 2014

2013

A 2-Bit, 24 dBm, Millimeter-Wave SOI CMOS Power-DAC Cell for Watt-Level High-Efficiency, Fully Digital m-ary QAM Transmitters.

Andreea Balteanu, Ioannis Sarkas, Eric Dacquay, Alexander Tomkins, Gabriel M. Rebeiz, Peter M. Asbeck, Sorin P. Voinigescu

IEEE J. Solid State Circuits, 2013

2012

A 45nm SOI CMOS Class-D mm-Wave PA with >10Vpp differential swing.

Ioannis Sarkas, Andreea Balteanu, Eric Dacquay, Alexander Tomkins, Sorin P. Voinigescu

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012