Andrea Redaelli

According to our database, Andrea Redaelli authored at least 15 papers between 2014 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of three.

2025

The use of machine learning for the prediction of response to follow-up in spine registries.

Alice Baroncini, Andrea Campagner, Federico Cabitza, Francesco Langella, Francesca Barile, Pablo Bellosta-López, Domenico Compagnone, Riccardo Cecchinato, Marco Damilano, Andrea Redaelli, Daniele Vanni, Pedro Berjano

Int. J. Medical Informatics, 2025

2024

Drift Compensation in Multilevel PCM for in-Memory Computing Accelerators.

L. Pistolesi, Artem Glukhov, Amadeo de Gracia Herranz, M. Lopez-Vallejo, Marcella Carissimi, Marco Pasotti, Pier Luigi Rolandi, Andrea Redaelli, I. Muñoz-Martín, S. Bianchi, Andrea Bonfanti, Daniele Ielmini

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology.

Luca Laurin, Matteo Baldo, Elisa Petroni, Giulia Samanni, Lorenzo Turconi, A. Motta, Massimo Borghi, A. Serafini, D. Codegoni, M. Scuderi, S. Ran, A. Claverie, Daniele Ielmini, Roberto Annunziata, Andrea Redaelli

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Enhancing reliability of a strong physical unclonable function (PUF) solution based on virgin-state phase change memory (PCM).

L. Cattaneo, Matteo Baldo, Nicola Lepri, Flavio Sancandi, Massimo Borghi, Elisa Petroni, A. Serafini, Roberto Annunziata, Andrea Redaelli, Daniele Ielmini

Proceedings of the IEEE International Reliability Physics Symposium, 2023

An 18nm ePCM with BJT selector NVM design for advanced microcontroller applications.

Antonino Conte, Francesco Tomaiuolo, Marco Ruta, Andrea Redaelli, Franck Arnaud, Thomas Jouanneau, Christian Boccaccio, Olivier Weber

Proceedings of the IEEE International Memory Workshop, 2023

ePCM reliability improvement through active material carbon implantation.

Elisabetta Palumbo, Alessandro Motta, Elisa Petroni, Daniele Gallinari, Annalisa Gilardini, Amos Galbiati, Massimo Borghi, Roberto Annunziata, Andrea Redaelli

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

2022 roadmap on neuromorphic computing and engineering.

Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Markovic, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri, John Paul Strachan, Suman Datta, Elisa Vianello, Alexandre Valentian, Johannes Feldmann, Xuan Li, Wolfram H. P. Pernice, Harish Bhaskaran, Steve B. Furber, Emre Neftci, Franz Scherr, Wolfgang Maass, Srikanth Ramaswamy, Jonathan Tapson, Priyadarshini Panda, Youngeun Kim, Gouhei Tanaka, Simon Thorpe, Chiara Bartolozzi, Thomas A. Cleland, Christoph Posch, Shih-Chii Liu, Gabriella Panuccio, Mufti Mahmud, Arnab Neelim Mazumder, Morteza Hosseini, Tinoosh Mohsenin, Elisa Donati, Silvia Tolu, Roberto Galeazzi, Martin Ejsing Christensen, Sune Holm, Daniele Ielmini, N. Pryds

Neuromorph. Comput. Eng., 2022

Interaction between forming pulse and integration process flow in ePCM.

Matteo Baldo, Elisa Petroni, Luca Laurin, Giulia Samanni, Octavian Melinc, Daniele Ielmini, Andrea Redaelli

Proceedings of the 17th Conference on Ph.D Research in Microelectronics and Electronics, 2022

Modeling Environment for Ge-rich GST Phase Change Memory Cells.

Matteo Baldo, Luca Laurin, Elisa Petroni, Giulia Samanni, M. Allegra, Enrico Gomiero, Daniele Ielmini, Andrea Redaelli

Proceedings of the IEEE International Memory Workshop, 2022

Characterization of reset state through energy activation study in Ge-GST based ePCM.

Matteo Baldo, Lorenzo Turconi, Alessandro Motta, Elisa Petroni, Luca Laurin, Daniele Ielmini, Andrea Redaelli

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

An Extended Temperature Range ePCM Memory in 90-nm BCD for Smart Power Applications.

Marcella Carissimi, Chantal Auricchio, Emanuela Calvetti, Laura Capecchi, Mattia Luigi Torres, Stefano Zanchi, P. Gupta, Riccardo Zurla, Alessandro Cabrini, Daniele Gallinari, Fabio Disegni, Massimo Borghi, Elisabetta Palumbo, Andrea Redaelli, Marco Pasotti

Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

2021

2021 Roadmap on Neuromorphic Computing and Engineering.

Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Markovic, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri, John Paul Strachan, Suman Datta, Elisa Vianello, Alexandre Valentian, Johannes Feldmann, Xuan Li, Wolfram H. P. Pernice, Harish Bhaskaran, Emre Neftci, Srikanth Ramaswamy, Jonathan Tapson, Franz Scherr, Wolfgang Maass, Priyadarshini Panda, Youngeun Kim, Gouhei Tanaka, Simon Thorpe, Chiara Bartolozzi, Thomas A. Cleland, Christoph Posch, Shih-Chii Liu, Arnab Neelim Mazumder, Morteza Hosseini, Tinoosh Mohsenin, Elisa Donati, Silvia Tolu, Roberto Galeazzi, Martin Ejsing Christensen, Sune Holm, Daniele Ielmini, N. Pryds

CoRR, 2021

16MB High Density Embedded PCM macrocell for automotive-grade microcontroller in 28nm FD-SOI, featuring extension to 24MB for Over-The-Air software update.

Fabio Disegni, A. Ventre, A. Molgora, Paolo Cappelletti, R. Badalamenti, P. Ferreira, G. Castagna, Andreia Cathelin, Anna Gandolfo, Andrea Redaelli, D. Manfrè, Alfonso Maurelli, C. Torti, F. Piazza, M. Carfì, Franck Arnaud, M. Perroni, M. Caruso, S. Pezzini, Roberto Annunziata, G. Piazza, Olivier Weber, M. Peri

Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021

Improving Ge-rich GST ePCM reliability through BEOL engineering.

Andrea Redaelli, Anna Gandolfo, Giulia Samanni, Enrico Gomiero, Elisa Petroni, Luca Scotti, Andrea Lippiello, Paolo Mattavelli, J. Jasse, D. Codegoni, A. Serafini, Rossella Ranica, Christian Boccaccio, Jury Sandrini, R. Berthelon, J. C. Grenier, Olivier Weber, David Turgis, A. Valery, S. Del Medico, V. Caubet, J. P. Reynard, Didier Dutartre, L. Favennec, Antonino Conte, Fabio Disegni, M. De Tomasi, A. Ventre, Matteo Baldo, Daniele Ielmini, Alfonso Maurelli, P. Ferreira, Franck Arnaud, F. Piazza, Paolo Cappelletti, Roberto Annunziata, R. Gonella

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2014

High Ion/Ioff ratio BJT selector for 32 cell string Resistive RAM arrays.

Andrea Redaelli, Luca Laurin, Simone Lavizzari, Carmela Cupeta, Giorgio Servalli, Augusto Benvenuti

Proceedings of the 44th European Solid State Device Research Conference, 2014