André Touboul

According to our database, André Touboul authored at least 16 papers between 2001 and 2008.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2008

Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications.

M. L. Bourqui, Laurent Béchou, Olivier Gilard, Yannick Deshayes, Pamela Del Vecchio, L. S. How, F. Rosala, Yves Ousten, André Touboul

Microelectron. Reliab., 2008

2007

Editorial.

Nathalie Labat, André Touboul

Microelectron. Reliab., 2007

Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs.

Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua

Microelectron. Reliab., 2007

2006

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements.

A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul

Microelectron. Reliab., 2006

Application of various optical techniques for ESD defect localization.

Fabien Essely, Frédéric Darracq, Vincent Pouget, Mustapha Remmach, Felix Beaudoin, Nicolas Guitard, Marise Bafleur, Philippe Perdu, André Touboul, Dean Lewis

Microelectron. Reliab., 2006

2005

Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions.

Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez

Microelectron. Reliab., 2005

Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure.

Nicolas Guitard, Fabien Essely, David Trémouilles, Marise Bafleur, Nicolas Nolhier, Philippe Perdu, André Touboul, Vincent Pouget, Dean Lewis

Microelectron. Reliab., 2005

2004

Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors.

Nathalie Labat, Nathalie Malbert, Cristell Maneux, André Touboul

Microelectron. Reliab., 2004

On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise.

Brice Grandchamp, Cristell Maneux, Nathalie Labat, André Touboul, Thomas Zimmer

Microelectron. Reliab., 2004

Study of the ESD defects impact on ICs reliability.

Fabien Essely, Corinne Bestory, Nicolas Guitard, Marise Bafleur, A. Wislez, E. Doche, Philippe Perdu, André Touboul, Dean Lewis

Microelectron. Reliab., 2004

2003

1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses.

J. C. Martin, Cristell Maneux, Nathalie Labat, André Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin

Microelectron. Reliab., 2003

Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.

Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren

Microelectron. Reliab., 2003

High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects.

Mohamed Belhaj, Cristell Maneux, Nathalie Labat, André Touboul, Philippe Bove

Microelectron. Reliab., 2003

2002

Degradation mechanisms induced by thermal and bias stresses in InP HEMTs.

Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust

Microelectron. Reliab., 2002

2001

Front Side and Backside OBIT Mappings applied to Single Event Transient Testing.

Dean Lewis, Vincent Pouget, Thomas Beauchêne, Hervé Lapuyade, Pascal Fouillat, André Touboul, Felix Beaudoin, Philippe Perdu

Microelectron. Reliab., 2001

Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses.

Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut

Microelectron. Reliab., 2001