Amel Chenouf

According to our database, Amel Chenouf authored at least 5 papers between 2014 and 2020.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2020

Sizing of the CMOS 6T-SRAM cell for NBTI ageing mitigation.

Amel Chenouf, Boualem Djezzar, Hamid Bentarzi, Abdelmadjid Benabdelmoumene

IET Circuits Devices Syst., 2020

2014

Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique.

Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil

Microelectron. Reliab., 2014

Investigation of defect microstructures responsible for NBTI degradation using effective dipole moment extraction.

Hakim Tahi, Boualem Djezzar, Karim Benmassai, Mohamed Boubaaya, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil

Proceedings of the 9th International Design and Test Symposium, 2014

Reliability analysis of CMOS inverter subjected to AC & DC NBTI stresses.

Amel Chenouf, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Hakim Tahi, Mohamed Goudjil

Proceedings of the 9th International Design and Test Symposium, 2014

Does NBTI effect in MOS transistors depend on channel length?

Abdelmadjid Benabdelmoumene, Boualem Djezzar, Hakim Tahi, Amel Chenouf, Mohamed Goudjil, Rafik Serhane, Fayçal Hadj Larbi, Mohamed Kechouane

Proceedings of the 26th International Conference on Microelectronics, 2014