Alvin J. Joseph

According to our database1, Alvin J. Joseph authored at least 14 papers between 2001 and 2022.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2022
SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021
SiGe HBTs with ${f_{T}/f_{\max}\, \sim\, 375/510GHz}$ Integrated in 45nm PDSOI CMOS.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2017
5G mm-Wave front-end-module design with advanced SOI process.
Proceedings of the 12th IEEE International Conference on ASIC, 2017

2015
2.4/5.5GHz LNA switch designs based on high resistive substrate 0.35um SiGe BiCMOS.
Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015

2014
Concurrent Design Analysis of High-Linearity SP10T Switch With 8.5 kV ESD Protection.
IEEE J. Solid State Circuits, 2014

2013
A smartphone SP10T T/R switch in 180-nm SOI CMOS with 8kV+ ESD protection by co-design.
Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013

2008
Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications.
IBM J. Res. Dev., 2008

2006

2005
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS.
Proc. IEEE, 2005

2004
Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications.
IEEE J. Solid State Circuits, 2004

2003
Product applications and technology directions with SiGe BiCMOS.
IEEE J. Solid State Circuits, 2003

Foundation of rf CMOS and SiGe BiCMOS technologies.
IBM J. Res. Dev., 2003

2002
40-Gb/s circuits built from a 120-GHz f<sub>T</sub> SiGe technology.
IEEE J. Solid State Circuits, 2002

2001
Transistor noise in SiGe HBT RF technology.
IEEE J. Solid State Circuits, 2001


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