Ali Khaki-Firooz

According to our database, Ali Khaki-Firooz authored at least 12 papers between 2000 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density.

Ali Khakifirooz, Eduardo Anaya, Sriram Balasubrahrmanyam, Geoff Bennett, Daniel Castro, John Egler, Kuangchan Fan, Rifat Ferdous, Kartik Ganapathi, Omar Guzman, Chang-Wan Ha, Rezaul Haque, Vinaya Harish, Majid Jalalifar, Owen Jungroth, Sung-Taeg Kang, Golnaz Karbasian, Jee-Yeon Kim, Siyue Li, Aliasgar S. Madraswala, Srivijay Maddukuri, Amr Mohammed, Shanmathi Mookiah, Shashi Nagabhushan, Binh Ngo, Deep Patel, Sai Kumar Poosarla, Naveen Prabhu V, Carlos Quiroga, Shantanu Rajwade, Ahsanur Rahman, Jalpa Shah, Rohit S. Shenoy, Ebenezer Tachie-Menson, Archana Tankasala, Sandeep Krishna Thirumala, Sagar Upadhyay, Krishnasree Upadhyayula, Ashley Velasco, Nanda Kishore Babu Vemula, Bhaskar Venkataramaiah, Jiantao Zhou, Bharat Pathak, Pranav Kalavade

Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2021

A 1Tb 4b/Cell 144-Tier Floating-Gate 3D-NAND Flash Memory with 40MB/s Program Throughput and 13.8Gb/mm² Bit Density.

Ali Khakifirooz, Sriram Balasubrahmanyam, Richard Fastow, Kristopher H. Gaewsky, Chang-Wan Ha, Rezaul Haque, Owen Jungroth, Steven Law, Aliasgar S. Madraswala, Binh Ngo, Naveen Prabhu V, Shantanu Rajwade, Karthikeyan Ramamurthi, Rohit S. Shenoy, Jacqueline Snyder, Cindy Sun, Deepak Thimmegowda, Bharat Pathak, Pranav Kalavade

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

2016

Fully depleted SOI (FDSOI) technology.

Kangguo Cheng, Ali Khaki-Firooz

Sci. China Inf. Sci., 2016

2012

Extremely thin SOI for system-on-chip applications.

Ali Khaki-Firooz, Kangguo Cheng, Qing Liu, Toshiharu Nagumo, Nicolas Loubet, Alexander Reznicek, James Kuss, J. Gimbert, Raghavasimhan Sreenivasan, Maud Vinet, Laurent Grenouillet, Yannick Le Tiec, Romain Wacquez, Z. Ren, J. Cai, Davood Shahrjerdi, Prasanna Kulkarni, Shom Ponoth, Scott Luning, Bruce Doris

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, 2012

2010

Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond.

Ali Khaki-Firooz, Kangguo Cheng, Basanth Jagannathan, Pranita Kulkarni, Jeffrey W. Sleight, Davood Shahrjerdi, Josephine B. Chang, Sungjae Lee, Junjun Li, Huiming Bu, Robert Gauthier, Bruce Doris, Ghavam G. Shahidi

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

2008

Transport enhancement techniques for nanoscale MOSFETs.

Ali Khaki-Firooz

PhD thesis, 2008

2006

Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations.

Dimitri A. Antoniadis, Ingvar Åberg, Cáit Ní Chléirigh, Osama M. Nayfeh, Ali Khaki-Firooz, Judy L. Hoyt

IBM J. Res. Dev., 2006

Low-power multiplier with static decision for input manipulation.

Mohammad Riazati, Ashkan Sobhani, M. Mottaghi-Dastjerdi, Ali Afzali-Kusha, Ali Khaki-Firooz

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2006), 2006

A very high performance address BUS encoder.

Hadi Parandeh-Afshar, Ali Afzali-Kusha, Ali Khaki-Firooz

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2006), 2006

2005

Optimization of the V_T control method for low-power ultra-thin double-gate SOI logic circuits.

Davood Shahrjerdi, Bahman Hekmatshoar, Ali Khaki-Firooz, Ali Afzali-Kusha

Integr., 2005

2004

Leakage current reduction by new technique in standby mode.

Amir Amirabadi, Javid Jaffari, Ali Afzali-Kusha, Mehrdad Nourani, Ali Khaki-Firooz

Proceedings of the 14th ACM Great Lakes Symposium on VLSI 2004, 2004

2000

A rail-to-rail, constant-G_m, 1-volt CMOS opamp.

Faramarz Bahmani, Seid Mehdi Fakhraie, Ali Khakifirooz

Proceedings of the IEEE International Symposium on Circuits and Systems, 2000