Ali A. Rezazadeh

According to our database, Ali A. Rezazadeh authored at least 5 papers between 1989 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2020

Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT.

Mohammad Abdul Alim, Mayahsa M. Ali, Ali A. Rezazadeh, Christophe Gaquière

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020

Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition.

Mohammad Abdul Alim, A. Tahsin, Ali A. Rezazadeh, Christophe Gaquière

Microelectron. J., 2020

2003

High gain and ultra wideband SiGe/BiCMOS cascaded single stage distributed amplifier for 4G RF front-end applications.

K. L. Koon, Zhirun Hu, Hamid Aghvami, Ali A. Rezazadeh

Proceedings of the IEEE 14th International Symposium on Personal, 2003

1997

CAD techniques for the electromagnetic design of monolithic millimetre-wave integrated circuits.

David Sánchez-Hernández, Ulun Karacaoglu, Tacar Gokdemir, Ata H. Khalid, Ali A. Rezazadeh, Miguel Ferrando, Elias de los Reyes, Ian D. Robertson

Ann. des Télécommunications, 1997

1989

Comparison of silicon bipolar and GaAlAs/GaAs heterojunction bipolar technologies using a propagation delay expression.

Peter Ashburn, Ali A. Rezazadeh, Eng-Fong Chor, Arthur Brunnschweiler

IEEE J. Solid State Circuits, April, 1989