Alexander Makarov

According to our database, Alexander Makarov authored at least 17 papers between 2010 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper.

Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs.

Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.

Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2022

On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors.

Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020

Style transfer with variational autoencoders is a promising approach to RNA-Seq data harmonization and analysis.

Nikolay Russkikh, Denis V. Antonets, Dmitry Shtokalo, Alexander Makarov, Yuri Vyatkin, Alexey Zakharov, Evgeny Terentyev

Bioinform., 2020

A Compact Physics Analytical Model for Hot-Carrier Degradation.

Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Full (V_g, V_d) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.

Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.

Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM.

Roberto Lacerda de Orio, Alexander Makarov, Siegfried Selberherr, Wolfgang Goes, Johannes Ender, Simone Fiorentini, Viktor Sverdlov

Proceedings of the 49th European Solid-State Device Research Conference, 2019

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.

Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2016

The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register.

Thomas Windbacher, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr

Proceedings of the 46th European Solid-State Device Research Conference, 2016

A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.

Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

SOT-MRAM based on 1Transistor-1MTJ-cell structure.

Alexander Makarov, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr

Proceedings of the 15th Non-Volatile Memory Technology Symposium, 2015

2014

Magnetic tunnel junctions for future memory and logic-in-memory applications.

Viktor Sverdlov, Hiwa Mahmoudi, Alexander Makarov, Siegfried Selberherr

Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems, 2014

2012

Emerging memory technologies: Trends, challenges, and modeling methods.

Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr

Microelectron. Reliab., 2012

2011

Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins.

Dmitry Osintsev, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr

Proceedings of the Large-Scale Scientific Computing - 8th International Conference, 2011

2010

Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations.

Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr

Proceedings of the Numerical Methods and Applications - 7th International Conference, 2010