Alessandro Calderoni

According to our database, Alessandro Calderoni authored at least 7 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

4F² Stackable Polysilicon Channel Access Device for Ultra-Dense NVDRAM.

A. Liao, M. Jerry, K. Karda, Matthew Hollander, P. Sharma, R. Ge, T. Zhao, G. K. El Hajjam, M. Mariani, M. Calabrese, D. Raimondi, A. Rigano, T. Rossi, K. Florent, N. Tapias, C. Jacob, Alessandro Calderoni, S. Chhajed, J. Zahurak, Nirmal Ramaswamy

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O2-Based Ferroelectric NVDRAM.

Devanarayanan Ettisserry, Angelo Visconti, Mauro Bonanomi, Riccardo Pazzocco, Andrea Locatelli, Alessandro Sebastiani, Ashonita Chavan, Matthew Hollander, Giorgio Servalli, Alessandro Calderoni, Nirmal Ramaswamy

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Materials Engineering for High Performance Ferroelectric Memory.

Ashonita Chavan, Adharsh Rajagopal, Yixin Yan, Isamu Asano, Devanarayanan Ettisserry, Vassil Antonov, Giorgio Servalli, Alessandro Calderoni, Nirmal Ramaswamy

Proceedings of the IEEE International Memory Workshop, 2024

2018

A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP).

Valerio Milo, Giacomo Pedretti, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Stefano Ambrogio, Daniele Ielmini

IEEE Trans. Very Large Scale Integr. Syst., 2018

Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity With RRAM Synapses.

Giacomo Pedretti, Valerio Milo, Stefano Ambrogio, Roberto Carboni, Stefano Bianchi, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini

IEEE J. Emerg. Sel. Topics Circuits Syst., 2018

2015

Challenges for high-density 16Gb ReRAM with 27nm technology.

Scott Sills, Shuichiro Yasuda, Alessandro Calderoni, Christopher Cardon, Jonathan Strand, Katsuhisa Aratani, Nirmal Ramaswamy

Proceedings of the Symposium on VLSI Circuits, 2015

Understanding pulsed-cycling variability and endurance in HfOx RRAM.

Simone Balatti, Stefano Ambrogio, Zhongqiang Wang, Scott Sills, Alessandro Calderoni, Nirmal Ramaswamy, Daniele Ielmini

Proceedings of the IEEE International Reliability Physics Symposium, 2015