Alberto Porzio

According to our database, Alberto Porzio authored at least 7 papers between 2004 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2019

Continuous Variable Entanglement over Different Degree of Freedom for Entanglement Multiplexing.

Alberto Porzio, Adriana Pecoraro, Filippo Cardano, Lorenzo Marrucci

Proceedings of the 21st International Conference on Transparent Optical Networks, 2019

2010

Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET.

Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2010

2009

Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions.

Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2009

2008

Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure.

Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi

Microelectron. Reliab., 2008

2006

Experimental study of power MOSFET's gate damage in radiation environment.

Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò

Microelectron. Reliab., 2006

2005

Experimental and Numerical investigation about SEB/SEGR of Power MOSFET.

Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò

Microelectron. Reliab., 2005

2004

The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure.

Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina

Microelectron. Reliab., 2004