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Albena Paskaleva

Orcid: 0000-0002-4409-1915

According to our database1, Albena Paskaleva authored at least 15 papers between 2002 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Online presence:

On csauthors.net:

Bibliography

2022
Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress.
[BibTeX]
[DOI]
Sandra Veljkovic
,
Nikola Mitrovic
,
Vojkan Davidovic
,
Snezana Golubovic
,
Snezana Djoric-Veljkovic
,
Albena Paskaleva
,
Dencho Spassov
,
Srboljub Stankovic
,
Marko S. Andjelkovic
,
Zoran Prijic
,
Ivica Manic
,
Aneta Prijic
,
Goran S. Ristic
,
Danijel Dankovic
J. Circuits Syst. Comput., December, 2022

2018
A review of pulsed NBTI in P-channel power VDMOSFETs.
[BibTeX]
[DOI]
Danijel Dankovic
,
Ivica Manic
,
Aneta Prijic
,
Vojkan Davidovic
,
Zoran Prijic
,
Snezana Golubovic
,
Snezana Djoric-Veljkovic
,
Albena Paskaleva
,
Dencho Spassov
,
Ninoslav Stojadinovic
Microelectron. Reliab., 2018

2014
Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub> stack.
[BibTeX]
[DOI]
Elena Atanassova
,
Nenad Novkovski
,
Dencho Spassov
,
Albena Paskaleva
,
Aleksandar Skeparovski
Microelectron. Reliab., 2014

2012
Doped Ta<sub>2</sub>O<sub>5</sub> and mixed HfO<sub>2</sub>-Ta<sub>2</sub>O<sub>5</sub> films for dynamic memories applications at the nanoscale.
[BibTeX]
[DOI]
Elena Atanassova
,
Albena Paskaleva
,
Dencho Spassov
Microelectron. Reliab., 2012

2011
Lightly Al-doped Ta<sub>2</sub>O<sub>5</sub>: Electrical properties and mechanisms of conductivity.
[BibTeX]
[DOI]
Dencho Spassov
,
Elena Atanassova
,
Albena Paskaleva
Microelectron. Reliab., 2011

2010
Constant current stress-induced leakage current in mixed HfO<sub>2</sub>-Ta<sub>2</sub>O<sub>5</sub> stacks.
[BibTeX]
[DOI]
Elena Atanassova
,
Nenad Novkovski
,
Albena Paskaleva
,
Dencho Spassov
Microelectron. Reliab., 2010

2008
Degradation behavior of Ta<sub>2</sub>O<sub>5</sub> stacks and its dependence on the gate electrode.
[BibTeX]
[DOI]
Elena Atanassova
,
Ninoslav Stojadinovic
,
Albena Paskaleva
Microelectron. Reliab., 2008

Effects of the metal gate on the stress-induced traps in Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub> stacks.
[BibTeX]
[DOI]
Elena Atanassova
,
Albena Paskaleva
,
Nenad Novkovski
Microelectron. Reliab., 2008

2007
Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers.
[BibTeX]
[DOI]
Albena Paskaleva
,
Martin Lemberger
,
Anton J. Bauer
Microelectron. Reliab., 2007

Metal gates and gate-deposition-induced defects in Ta<sub>2</sub>O<sub>5</sub> stack capacitors.
[BibTeX]
[DOI]
Elena Atanassova
,
Dencho Spassov
,
Albena Paskaleva
Microelectron. Reliab., 2007

Challenges of Ta<sub>2</sub>O<sub>5</sub> as high-k dielectric for nanoscale DRAMs.
[BibTeX]
[DOI]
Elena Atanassova
,
Albena Paskaleva
Microelectron. Reliab., 2007

2005
Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k Hf<sub>x</sub>Ti<sub>y</sub>Si<sub>z</sub>O films.
[BibTeX]
[DOI]
Albena Paskaleva
,
Anton J. Bauer
,
Martin Lemberger
Microelectron. Reliab., 2005

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor.
[BibTeX]
[DOI]
Martin Lemberger
,
Albena Paskaleva
,
Stefan Zürcher
,
Anton J. Bauer
,
Lothar Frey
,
Heiner Ryssel
Microelectron. Reliab., 2005

2003
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors.
[BibTeX]
[DOI]
Albena Paskaleva
,
Martin Lemberger
,
Stefan Zürcher
,
Anton J. Bauer
,
Lothar Frey
,
Heiner Ryssel
Microelectron. Reliab., 2003

2002
Breakdown fields and conduction mechanisms in thin Ta<sub>2</sub>O<sub>5</sub> layers on Si for high density DRAMs.
[BibTeX]
[DOI]
Elena Atanassova
,
Albena Paskaleva
Microelectron. Reliab., 2002


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