Alain Hoffmann

According to our database, Alain Hoffmann authored at least 6 papers between 2007 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies.

Marcelino Seif, Fabien Pascal, Bruno Sagnes, J. Elbeyrouthy, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria

Proceedings of the 29th International Conference on Microelectronics, 2017

2015

A complete compact model for flicker noise in MOS transistors.

Alfredo Arnaud, Alain Hoffmann

Proceedings of the IEEE 6th Latin American Symposium on Circuits & Systems, 2015

2014

Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications.

Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria

Microelectron. Reliab., 2014

Study of low frequency noise in advanced SiGe: C heterojunction bipolar transistors.

Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria

Proceedings of the 44th European Solid State Device Research Conference, 2014

2007

Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization.

Cédric Leyris, Frédéric Martinez, M. Valenza, Alain Hoffmann, J. C. Vildeuil

Microelectron. Reliab., 2007

N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis.

Cédric Leyris, Frédéric Martinez, Alain Hoffmann, M. Valenza, J. C. Vildeuil

Microelectron. Reliab., 2007