Alain Bravaix
Orcid: 0000-0002-2308-3537
According to our database1,
Alain Bravaix
authored at least 30 papers
between 2001 and 2023.
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Bibliography
2023
Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
2021
Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Proceedings of the IEEE International Reliability Physics Symposium, 2019
2018
Resilient automotive products through process, temperature and aging compensation schemes.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2017
Microelectron. Reliab., 2017
Proceedings of the IEEE International Test Conference, 2017
Proceedings of the 23rd IEEE International Symposium on On-Line Testing and Robust System Design, 2017
2016
Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes.
Microelectron. Reliab., 2016
Microelectron. Reliab., 2016
Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes.
Proceedings of the 22nd IEEE International Symposium on On-Line Testing and Robust System Design, 2016
2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Proceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition, 2015
2012
Microscopic scale characterization and modeling of transistor degradation under HC stress.
Microelectron. Reliab., 2012
2009
Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics.
Microelectron. Reliab., 2009
Microelectron. Reliab., 2009
2007
Microelectron. Reliab., 2007
Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation.
Proceedings of the Integrated Circuit and System Design. Power and Timing Modeling, 2007
2006
2005
Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides.
Microelectron. Reliab., 2005
Microelectron. Reliab., 2005
Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies.
Microelectron. Reliab., 2005
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.
Microelectron. Reliab., 2005
2004
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides.
Microelectron. Reliab., 2004
2003
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies.
Microelectron. Reliab., 2003
2001
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs.
Microelectron. Reliab., 2001